Registro completo de metadatos
| Campo DC | Valor | Lengua/Idioma |
|---|---|---|
| dc.creator | Rozenberg, Marcelo Javier | - |
| dc.creator | Inoue, I.H. | - |
| dc.creator | Granados Sanchez, Maria Jimena | - |
| dc.date | 2018-09-28T14:52:37Z | - |
| dc.date | 2018-09-28T14:52:37Z | - |
| dc.date | 2005-12 | - |
| dc.date | 2018-09-27T16:13:06Z | - |
| dc.date.accessioned | 2019-04-29T15:29:08Z | - |
| dc.date.available | 2019-04-29T15:29:08Z | - |
| dc.date.issued | 2018-09-28T14:52:37Z | - |
| dc.date.issued | 2018-09-28T14:52:37Z | - |
| dc.date.issued | 2005-12 | - |
| dc.date.issued | 2018-09-27T16:13:06Z | - |
| dc.identifier | Rozenberg, Marcelo Javier; Inoue, I.H.; Granados Sanchez, Maria Jimena; A model for non-volatile electronic memory devices with strongly correlated materials; Elsevier Science Sa; Thin Solid Films; 486; 1-2; 12-2005; 24-27 | - |
| dc.identifier | 0040-6090 | - |
| dc.identifier | http://hdl.handle.net/11336/61192 | - |
| dc.identifier | CONICET Digital | - |
| dc.identifier | CONICET | - |
| dc.identifier.uri | http://rodna.bn.gov.ar:8080/jspui/handle/bnmm/294996 | - |
| dc.description | The behavior of a model for non-volatile electronic memory devices with strongly correlated materials, was investigated. The domain structure assumed in this model is motivated from a rather universal aspect of strongly correlated perovskites such as the spatial inhomogeneity that occurs at the nanoscale. It is observed that the switching mechanism is related hysteresis in the I-V characteristics and that the hysteresis is itself related to a conjectured metal-insulator transition at the level of small domains. The results show that the domains that receive charge are subject to an 'effective doping' that may drive them across a boundary between two distinct electronic phases. | - |
| dc.description | Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina | - |
| dc.description | Fil: Inoue, I.H.. National Institute Of Advanced Industrial Science And Technology; Estados Unidos | - |
| dc.description | Fil: Granados Sanchez, Maria Jimena. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.format | application/pdf | - |
| dc.language | eng | - |
| dc.publisher | Elsevier Science Sa | - |
| dc.relation | info:eu-repo/semantics/altIdentifier/doi/http://dx.doi.org/10.1016/j.tsf.2004.10.059 | - |
| dc.rights | info:eu-repo/semantics/restrictedAccess | - |
| dc.rights | https://creativecommons.org/licenses/by-nc-sa/2.5/ar/ | - |
| dc.source | reponame:CONICET Digital (CONICET) | - |
| dc.source | instname:Consejo Nacional de Investigaciones Científicas y Técnicas | - |
| dc.source | instacron:CONICET | - |
| dc.subject | NON-VOLATILE MEMORY | - |
| dc.subject | RESISTANCE SWITCHING | - |
| dc.subject | Astronomía | - |
| dc.subject | Ciencias Físicas | - |
| dc.subject | CIENCIAS NATURALES Y EXACTAS | - |
| dc.title | A model for non-volatile electronic memory devices with strongly correlated materials | - |
| dc.type | info:eu-repo/semantics/article | - |
| dc.type | info:eu-repo/semantics/publishedVersion | - |
| dc.type | info:ar-repo/semantics/articulo | - |
| Aparece en las colecciones: | CONICET | |
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